OSIRIS, an ECSEL Research and Innovation Action (RIA), proposes a large improvement of Silicon Carbide (SiC) wafers. SiC is a semiconductor material with unique electrical and thermal properties suitable for high temperature and high-power applications.

OSIRIS expects to achieve a thermal conductivity increased by 30%, which signals a major breakthrough for devices that must handle high power. For next-generation transistors, these new wafers will bring significant cost savings.